特征
•增强型MOSFET晶体管（IDD≅0@ VDD=12.5V, VGG=0V）
• Pout>20W,ηT>25% @ VDD=12.5V, VGG=5V, Pn=50mW
•宽带频率范围：896-902/ 935-941MHz
•低功耗控制电流IGG=1mA （typ）在VGG=5V
•模块尺寸：66 x 21 x 9.88 mm
•线性操作有可能通过设置静态漏电流同门电压和输出功率的控制输入功率
RA20H8994M：Silicon RF Power Modules RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For RADIO
DESCRIPTION
The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 896- to 941-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage （VGG=0V）, only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V （minimum）, output power and drain current increases substantially.The nominal output power becomes available at 4.5V （typical） and 5V （maximum）. At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors （IDD0 @ VDD=12.5V, VGG=0V）
• Pout>20W, T>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 896-941MHz
• Low-Power Control Current IGG=1mA （typ） at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA20H8994M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER：RA20H8994M-101
SUPPLY FORM：Antistatic tray,10 modules/tray
深圳浩时健电子有限公司是国内三菱射频电子元器件专业供应商，三菱射频产品广泛应用用于移动通信基站、直放站、卫星通信、有线电视、雷达、无线本地环等领域。积极向国内生产和科研单位*新产品：日本三菱公司生产的系列射频功率放大模块、系列射频场效应三极管。多年以来已为国内众多的生产厂家、科研院所、大专院校、国家重要单位维修部门的生产、维修、研制开发新品、教学实验等提供了准确、快捷、方便的配套供货服务。在经营运作上,我公司批发、零售兼营，可向用户*保证货源，并保证供货品种的技术指标满足相关的检测标准。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射频功率放大模块）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司*经营日本MITSUBISHI三菱全系列射频功率放大模块，保证*，*现货，批号无铅环保，假一罚十。深圳、香港公司备有大量现货库存，可提供样品，现*热卖中。
