RD06HVF1是一个专门MOS FET型晶体管专为VHF RF功率放大器应用
特征:高功率增益:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
应用:对于输出的高功率放大器阶段VHF
描述:RD06HVF1是一个专门MOS FET型晶体管专为VHF RF功率放大器应用
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in
VHF band radio sets.
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特征:高功率增益:Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
应用:对于输出的高功率放大器阶段VHF 频带移动无线sets
ROHS柔性:RD06HVF1-101是RoHS兼容产品.RoHS遵守表明该地段后由信“G”标记.该产品包括高熔融高温型焊料中的铅.如何以往,它适用于RoHS方向以下情况除外.1.Lead高熔融焊锡(i.e.tin无铅焊料合金中含有较多的than85%.)